Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AUT:E | Dynamic random access memory | DEX Nichicon Xilinx Field Programmable Gate Array

Xilinx Field Programmable Gate Array Part #XCKU3P-3SFVB784E

Supply Under-Voltage Protection

5N20W67660

Both units have open-collector outputs and integral diodes for inductive load transient suppression

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Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AUT:E | Dynamic random access memory | DEX Nichicon Xilinx Field Programmable Gate ArrayMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 062E AUT: E features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register