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Lenovo Label W 20V9 Geo Kit Part #5L10W35117
1) ■ Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4
NOT IATA RESTRICTED AS PER SP A158
system weight reduction
Analog Devices Operational Amplifier Part #LTC2053IMS8#PBF
Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G8SA-062E:E | Dynamic random access memory | DEX LED Driver Lenovo Label W 20V9 GeoMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 062E: E features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register
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