Micron Technology DRAM SDRAM-DDR4, Part #: MT41K256M16TW-107:P TR | Dynamic random access memory | DEX all-consumerelectronics Topandbottom power switches are included

Topandbottom power switches are included with all necessary circuitry to minimize the need for external components

315 MHZ Door Lock Frequency

High-Eff Step-Dwn Convtr Mod

The peripheral complement of the LPC1769/68/67/66/65/64/63 includes up to 512 kB of flash memory

and an undervoltage lockout circuit

Micron Technology DRAM SDRAM-DDR4, Part #: MT41K256M16TW-107:P TR | Dynamic random access memory | DEX all-consumerelectronics Topandbottom power switches are includedMicron Technology DRAM SDRAM DDR3L, Part #: MT41K256M16TW 107: P TR features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS