Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L768M32D3PU-107 WT:B | Dynamic random access memory | DEX MOSFET Broadcom 560 Gb/s Programmable Multilayer

Broadcom 560 Gb/s Programmable Multilayer Switch - IC - part #BCM56371A2KFSBG

A915AY-6R8M=P3

Part Number: 5324762

30V – VDD1 = 1

OSM:MC7815ACD2TG

Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L768M32D3PU-107 WT:B | Dynamic random access memory | DEX MOSFET Broadcom 560 Gb/s Programmable MultilayerMicron Technology DRAM , Part #: MT52L768M32D3PU 107 WT: B features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based on t CK